| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change memory that is capable of suppressing power consumption at the time of switching of resistance of a resistance change layer.SOLUTION: A storage element 10 of a resistance change memory includes: a plate electrode 13; a fine wire electrode 16; and a resistance change layer 14 that is arranged between the plate electrode 13 and the fine wire electrode 16 and is made of a metallic oxide whose resistance changes due to application of a voltage between the plate electrode 13 and the fine wire electrode 16. Also, the storage element 10 includes a current barrier part 15 formed between the fine wire electrode 16 and the resistance change layer 14. Current is hard to flow through the current barrier part 15 in one current flow direction between the plate electrode 13 and the fine wire electrode 16 in comparison with the resistance change layer 14. |
