SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that forms an oxide film with excellent film quality at low temperature.SOLUTION: A substrate processing apparatus includes: a processing chamber 201; a first heat source 207 that heats a substrate 200 in the processing chamber 201 to a first temperature; a preliminary reaction chamber 301; a second heat source 302 that heats the interior of the preliminary reaction chamber 301 to a second temperature that is equal to or higher than the first temperature; an oxygen-containing gas feed system 232a that feeds oxygen-containing gas into the preliminary reaction chamber 301; a hydrogen-containing gas feed system 232b that feeds hydrogen-containing gas into the preliminary reaction chamber 301; a connecting section 330 that connects the preliminary reaction chamber 301 and the processing chamber 201; a first exhaust system 231 that evacuates the interior of the processing chamber 201; a second exhaust system 320 that is connected to the connecting section 330 and exhausts gas fed from the preliminary reaction chamber 301 without feeding the gas into the processing chamber 201; and pressure regulating sections 242 and 245 that regulate pressures inside the processing chamber 201 and the preliminary reaction chamber 301 in such a manner that the pressures are less than atmospheric pressure.