RESIST MATERIAL, RESIST COMPOSITION, MANUFACTURING METHOD OF SUBSTRATE WHERE PATTERN IS FORMED, AND EVALUATION METHOD OF RESIST MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a resist material capable of manufacturing a substrate where a pattern reducing roughness is formed in a case of performing processing with dry etching.SOLUTION: A resist material (M) contains both a lactone skeleton and an ester skeleton. When reactive ion etching is performed with induction coupling plasma using chlorine gas, carbonyl group amounts (a1-B) and (a1-A) before and after etching in the lactone skeleton and a carbonyl group amounts (a2-B) and (a2-A) before and after etching in the ester skeleton satisfy the following inequality: [{(a1-B)-(a1-A)}/(a1-B)]/[{(a2-B)-(a2-A)}/(a2-B)]≤1.5.