| 摘要 |
PROBLEM TO BE SOLVED: To avoid processing damage.SOLUTION: In the method of manufacturing a magnetoresistive effect element, a first insulation layer 32 and a second insulation layer 33 are formed on a substrate. A second hole 34 penetrating the second insulation layer, and a first hole 35 penetrating the first insulation layer are formed. Diameter of the first hole is set larger than that of the second hole. A first magnetic layer 37 is formed on the substrate in the first hole, and the second insulation layer on the outside of the first and second holes, so as to be separated from each other. Diameters of the first hole and second hole are enlarged. The first magnetic layer on the outside of the first and second holes is removed. On the first magnetic layer in the first hole, a tunnel barrier layer 38 is formed to cover the first magnetic layer in the first hole. A second magnetic layer 39 is formed on the tunnel barrier layer in the first hole. |
