发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem that it is difficult to form a uniform ALD/MLD film because an opening of a resist becomes deep when the ALD/MLD film is deposited on lateral faces of the resist and double patterning is performed by using the ALD/MLD film as a mask.SOLUTION: A semiconductor device manufacturing method comprises in deposition of an ALD/MLD film on lateral faces of a resist: depositing a first ALD/MLD film under a first deposition condition at a lower deposition rate in an initial stage; and subsequently depositing a second ALD/MLD film under a second deposition condition at a higher deposition rate than under the first deposition condition. |
申请公布号 |
JP2013197388(A) |
申请公布日期 |
2013.09.30 |
申请号 |
JP20120064118 |
申请日期 |
2012.03.21 |
申请人 |
ELPIDA MEMORY INC |
发明人 |
SERA YUJI |
分类号 |
H01L21/027;H01L21/28;H01L21/3213;H01L21/76;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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