发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To solve a problem that it is difficult to form a uniform ALD/MLD film because an opening of a resist becomes deep when the ALD/MLD film is deposited on lateral faces of the resist and double patterning is performed by using the ALD/MLD film as a mask.SOLUTION: A semiconductor device manufacturing method comprises in deposition of an ALD/MLD film on lateral faces of a resist: depositing a first ALD/MLD film under a first deposition condition at a lower deposition rate in an initial stage; and subsequently depositing a second ALD/MLD film under a second deposition condition at a higher deposition rate than under the first deposition condition.
申请公布号 JP2013197388(A) 申请公布日期 2013.09.30
申请号 JP20120064118 申请日期 2012.03.21
申请人 ELPIDA MEMORY INC 发明人 SERA YUJI
分类号 H01L21/027;H01L21/28;H01L21/3213;H01L21/76;H01L21/768;H01L21/8242;H01L27/108 主分类号 H01L21/027
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