| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be microfabricated, and a manufacturing method thereof.SOLUTION: A semiconductor device comprises a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type provided on the first semiconductor layer, a second semiconductor layer of the first conductivity type provided on the base layer, a plurality of gate electrodes of which the upper end is positioned higher than a top face of the base layer, of which the lower end is positioned lower than a bottom face of the base layer, and which is brought into contact with the first semiconductor layer, the second semiconductor layer and the base layer via a gate insulating film, an insulating member which is disposed on the gate electrodes and of which the top face is positioned lower than a top face of the second semiconductor layer, and a conductive film which covers the second semiconductor layer and an upper end of the insulating member between the gate electrodes and from an upper end of the second semiconductor layer to the lower end thereof while being spaced apart from the gate electrodes by a fixed distance. |
