| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing noise generation when performing error correction encoding for information data and writing it.SOLUTION: An error correction encoding processing is performed for each N bit of information data to be written. The information data to which parity data obtained by the processing is added is temporarily captured into a latch unit as follows, so as to perform synchronous writing to a memory array. That is, while capturing and outputting the parity data, the latch unit captures the information data of N-bits in a time-division manner for each bit group each consisting of the number of bits that is smaller than N-bits, and sequentially outputs it. Then, a write bias voltage corresponding to each bit of the parity data and information data, which are output from the latch unit, is generated and applied to the memory array. |
