| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which mechanical strength of a gate structure can be enhanced.SOLUTION: The semiconductor device includes a plurality of gate structures, a first insulation film, and a second insulation film. The first insulation film crosslinks adjoining gate structures so as to form cavities above and below, at a position between the adjoining gate structures out of the plurality of gate structures. The second insulation film is formed so as to cover the cavity above the first insulation film between the adjoining gate structures. |
