发明名称 SAMPLE PREPARATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sample preparation method that prepares a sample without curvature even in a thin film of which the film thickness is extremely small, by forming an observation surface of the thin film and a deposition film on both sides of a surface opposite to the observation surface.SOLUTION: The sample preparation method includes the steps of: processing a sample by ion beam, and forming a thin film 7a with a film thickness through which electron beam 8 can pass; supplying deposition gas into the thin film 7a; and irradiating the thin film 7a with the electron beam 8, and forming a deposition film on a front face 7d of the thin film 7a and on a rear face 7e opposite to the front face 7d.
申请公布号 JP2013195380(A) 申请公布日期 2013.09.30
申请号 JP20120066006 申请日期 2012.03.22
申请人 HITACHI HIGH-TECH SCIENCE CORP 发明人 MITSU KIN;NAKATANI IKUKO
分类号 G01N1/28 主分类号 G01N1/28
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