| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a short margin is not likely to be ensured when a clearance of an upper part of a hole is widened by etch back.SOLUTION: A semiconductor device manufacturing method comprises: a process of depositing a first interlayer insulation film on a predetermined member; a process of depositing on the first interlayer insulation film, a second interlayer insulation film having an etching rate lower than that of the first interlayer insulation film; a process of depositing a support insulation film having an etching rate lower than an etching rate of the first interlayer insulation film and an etching rate of the second interlayer insulation film; a process of depositing on the support insulation film, a sacrificial film having a wet etching rate higher than an etching rate of the first interlayer insulation film and an etching rate of the second interlayer insulation film; a process of forming a cylinder hole leading to a pad from the sacrificial film to the first interlayer insulation film by a lithography technique and anisotropic etching; and a process of selectively wet etching a surface of the first interlayer insulation film and removing the sacrificial film at the cylinder hole with respect to the second interlayer insulation film. |
