| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device capable of reducing unevenness of processing occurring on a processing object substrate having projections and recesses.SOLUTION: In a substrate processing method, a wafer 10 is loaded into a processing chamber 201 to be placed on a susceptor 217, and the wafer 10 is heated. Inside of the processing chamber 201 is evacuated, then reaction gas is supplied into the processing chamber 201. A plasma generating portion 214 excites the reaction gas by an electric field formed in the processing chamber 201, thus the wafer 10 having a plurality of projections and recesses is processed. When processing the wafer 10, first, the wafer is processed where an impedance variable mechanism 274 provides the excited reaction gas on the wafer 10. Then, the wafer 10 is subjected to the next processing where a smaller amount of the reaction gas is provided than that in the previous process. |
