| 摘要 |
PURPOSE: An epitaxial reactor is provided to prevent the deterioration of the resistivity of a wafer edge part by supplying separate hydrogen gas to the wafer edge part in an epitaxial process. CONSTITUTION: A chamber (110) includes a susceptor. A growth gas supply part (120) supplies a source gas and a vapor phase growth gas to a wafer. The vapor phase growth gas includes a first hydrogen gas. A gas discharge part (130) ejects the vapor phase growth gas from the chamber to the outside. A hydrogen gas supply part (140) supplies a second hydrogen gas to the wafer edge part. |
