| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of stabilizing operation of the semiconductor device without increasing the footprint.SOLUTION: The control gate electrode of a memory cell transistor is formed, and then a memory gate electrode is formed on the side thereof. Subsequently, a memory offset spacer is formed on the sidewall of the memory gate electrode, and the memory source region of the memory cell transistor is formed using the memory gate electrode, a memory offset spacer, or the like, as a mask by ion implantation. Thereafter, the memory drain region of the memory cell transistor is formed by ion implantation. Finally, a sidewall insulation film is formed in the memory cell transistor. The memory offset spacer disappears by cleaning, or the like, before the sidewall insulation film is formed. |
