LIGHT EMITTING DIODE HAVING GALLIUM NITRIDE SUBSTRATE

摘要

PURPOSE: A light emitting diode including a GaN substrate is provided to prevent the decrease of a light emitting area by connecting a first electrode to a first conductive semiconductor layer through a substrate. CONSTITUTION: First insulating elements (27) are located on a first conductive contact layer (23). A first conductive semiconductor layer covers the first insulating elements. A second conductive semiconductor layer is located on the upper surface of the first conductive semiconductor layer. An active layer (31) is located between the first conductive semiconductor layer and the second conductive semiconductor layer. A first electrode (43) is electrically connected to the first conductive contact layer.