发明名称 SECONDARY ION MASS SPECTROMETRY APPARATUS AND SECONDARY ION MASS SPECTROMETRY METHOD
摘要 PROBLEM TO BE SOLVED: To provide a secondary ion mass spectrometry technology by which, when a thinning work of grinding a substrate for secondary ion measuring is carried out, reduction in a depth resolution, which is caused by a tilt of a ground surface relative to a sample surface is prevented.SOLUTION: A tilt of a ground surface of a substrate whose back surface is mechanically thinned is measured relative to an interface between the substrate and a sample on the substrate. The ground surface of the substrate is correctively etched with ion beam to make the tilt of the ground surface become parallel to the interface. After the correction, secondary ion from the substrate is measured to obtain an element distribution in a depth direction of the sample.
申请公布号 JP2013195152(A) 申请公布日期 2013.09.30
申请号 JP20120060790 申请日期 2012.03.16
申请人 FUJITSU LTD 发明人 SASAKI MAKOTO
分类号 G01N27/62;H01J49/14 主分类号 G01N27/62
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