SEMICONDUCTOR WAFER, SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To more surely prevent breakage of a gate insulating film due to charge-up in a process of manufacturing an MOSFET.SOLUTION: A semiconductor wafer includes a first conductivity type semiconductor substrate having thereon a plurality of chip regions, each of which is configured to form a semiconductor integrated circuit thereon, and a scribe region as being region between the individual chip regions. A second conductivity type diffusion layer extending from the inside of the chip region to the inside of the scribe region across a dicing line serving as a boundary of the chip region and the scribe region is disposed on the semiconductor wafer. A target protection portion of the semiconductor integrated circuit is connected to the diffusion layer via a wiring layer in the chip region. The diffusion layer is connected to the semiconductor substrate in the scribe region.