发明名称 PLASMA PROCESSING APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To enhance the quality of plasma processing for a workpiece while maintaining the speed of plasma processing, by reducing the self-bias voltage thereby not scraping a dielectric window 4.SOLUTION: In the plasma processing method for plasma processing a workpiece placed in a vacuum vessel by introducing a plasma generation gas into the vacuum vessel, and making the gas plasma by making a high frequency alternating magnetic field act in the vacuum vessel, the height position of the central part of an antenna generating an alternating magnetic field when supplied with a high frequency power can be adjusted higher than the height position of the outer peripheral part of the antenna.
申请公布号 JP2013197304(A) 申请公布日期 2013.09.30
申请号 JP20120062691 申请日期 2012.03.19
申请人 TOSHIBA CORP 发明人 TOKUDA YOSHINORI
分类号 H01L21/3065;H05H1/00;H05H1/46 主分类号 H01L21/3065
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