| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows enlarging an active channel width while suppressing an increase in a chip size.SOLUTION: A semiconductor device includes: a substrate; a drain layer provided above the substrate; a source layer provided above the substrate so as to be spaced apart from the drain layer and in which end portions on the drain layer side are curved in a plan view; a channel region provided between the source layer and the drain layer and in which end portions on the source layer side and end portions on the drain layer side are curved in a plan view; and a gate electrode provided on the channel region via a gate insulating film and in which end portions on the source layer side and end portions on the drain layer side are curved in a plan view. The source layer has salients and recesses alternately repeated in a second direction orthogonal to a first direction connecting the source layer and the drain layer in a plan view, and the end portions of the drain layer on the source layer side is not protruded in the recesses in a plan view. |
