发明名称 MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce material gas remaining in a gas nozzle and causing generation of particles that accumulate in the gas nozzle of a semiconductor production apparatus.SOLUTION: As shown on fig. 1, the manufacturing apparatus of semiconductor device includes a gas nozzle, a first gas jet port for feeding gas in a direction perpendicular to the gas nozzle toward a semiconductor wafer on a side wall of the gas nozzle, and a second gas jet port disposed, separately from the first gas jet port, closer to the terminal side than the first gas jet port in the gas nozzle, and feeding gas not toward the semiconductor wafer.
申请公布号 JP2013197329(A) 申请公布日期 2013.09.30
申请号 JP20120063233 申请日期 2012.03.21
申请人 RENESAS ELECTRONICS CORP 发明人 TAWARA KEIICHIRO
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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