| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of wafer cracking by preventing degradation in wafer strength in a case where the thickness of wafer is reduced.SOLUTION: On a first main surface of a wafer 10, there are formed a front surface element structure of invert block type IGBT, a front surface element structure of a breakdown resistant structure part, and a p-type separation region of a separation structure part. The front surface element structure of invert block type IGBT and the front surface element structure of the breakdown resistant structure part are formed in an element formation region 1 of the wafer 10. The p-type separation region of the separation structure part is formed on an element end part side of the element formation region 1 in such a manner as to enclose the breakdown resistant structure part. Then, after the thickness of the wafer 10 is reduced from a second main surface side of the wafer 10, a groove 3 which reaches the p-type separation region is formed on the second main surface of the wafer 10. Here, a straight line to an intersection of the groove 3 is taken as 3. Then, a p-type collector layer is formed on the second main surface of the wafer 10 and a p-type layer contacting the p-type collector layer and the p-type separation region is formed on a side wall of the groove 3. Thus the invert block type IGBT is completed. |
