| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING BURIED GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p>PURPOSE: A semiconductor device including a buried gate structure and a manufacturing method thereof are provided to facilitate a patterning process by including a guard ring on an interface area. CONSTITUTION: A substrate is classified into a cell area, a peripheral circuit area, and an interface area. The interface area is formed between the cell area and the peripheral circuit area. A guard ring (106) is formed on the interface area. A first gate structure (120) is formed on the cell area. A second gate structure (150) is formed on the peripheral circuit area.</p> |
| 申请公布号 |
KR20130106689(A) |
申请公布日期 |
2013.09.30 |
| 申请号 |
KR20120028415 |
申请日期 |
2012.03.20 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, SE MYEONG;HAN, SANG HYUN;BAN, HYO DONG |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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