发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT WAFER, SEMICONDUCTOR LIGHT-EMITTING ELEMENT WAFER, AND SUSCEPTOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element wafer in which total number lighting inspection can be carried out in the early stage of the manufacturing process of a semiconductor light-emitting element at a low cost, and to provide a semiconductor light-emitting element wafer, and a susceptor.SOLUTION: In the manufacturing method of a semiconductor light-emitting element wafer including a semiconductor growth step for forming a semiconductor structure layer by laminating a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type, sequentially on a substrate, the semiconductor growth step includes an electrode formation step for generating an abnormal growth portion where at least a part of the first semiconductor layer is exposed by performing abnormal growth at a temperature lower than the growth temperature of the semiconductor structure layer in a partial region on the substrate, forming a first electrode on the second semiconductor layer of a normal growth portion other than the abnormal growth portion after ending the semiconductor growth step, and forming a second electrode connected with the first semiconductor layer exposed from the abnormal growth portion.
申请公布号 JP2013197340(A) 申请公布日期 2013.09.30
申请号 JP20120063417 申请日期 2012.03.21
申请人 STANLEY ELECTRIC CO LTD 发明人 MATSUMOTO KOJI;HORIO TADASHI
分类号 H01L33/00;H01L21/205;H01L33/32 主分类号 H01L33/00
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