| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces resistance of a body and increases an operation speed in a Dt-MOS transistor.SOLUTION: In a semiconductor device, element isolation is achieved in an active region 21A by an element isolation region 21I and an n-type well 21NW under a p-type well 21PW. By forming an insulation film region part (21IT)at a depth deeper than at least a lower limit of a source region or drain region 21D, at a depth, for example, so as to reach the n-type well 21NW under the p-type well 21PW, the source region and the drain region 21Dare electrically isolated from a tap region 21T. |
