| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoelectric conversion element, which can simplify a process.SOLUTION: The method for manufacturing the photoelectric conversion element includes: a step (h) of sequentially depositing a PSG film 26 and an NSG film 27 on one surface of an n-type single crystal silicon substrate 1, and then implanting B ions from one surface side of the n-type single crystal silicon substrate 1; and a step (j) of subsequently heat-treating the n-type single crystal silicon substrate 1, the PSG film 26 and the NSG film 27 at such a temperature that P in the PSG film 26 diffuses in the n-type single crystal silicon substrate 1 and ion-implanted B is electrically activated. |
