| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve reliability by separating the semiconductor device without damaging electrical properties. CONSTITUTION: A first semiconductor layer (22) is formed on a substrate. A second semiconductor layer (24) is formed on the first semiconductor layer. An electrode is formed on the second semiconductor layer. A third semiconductor layer (40) is formed on the second semiconductor layer. The third semiconductor layer has a polarity which is opposite to the polarity of a carrier. [Reference numerals] (AA) Structure drawing of a semiconductor device about a first embodiment |
