METHOD OF FABRICATING GATE INSULATING LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate insulation layer and a method for manufacturing a semiconductor device are provided to generate a uniform threshold voltage by forming a rich germanium region on the surface of a channel region. CONSTITUTION: Germanium is implanted into a single crystal silicon-containing substrate (21). A device isolation region (22) is formed on the single crystal silicon-containing substrate. Gate oxide is formed on the surface of the single crystal silicon-containing substrate. A rich germanium region is formed under the gate oxide. The germanium oxide is crystallized by an annealing process.