发明名称 NANOSTRUCTURES CONSISTING OF GATE METALS AND GATE METAL SUB OXIDES AND METHODS OF THEIR PRODUCTION
摘要 FIELD: process engineering.SUBSTANCE: invention relates to fine structures including gate metal or gate metal sub oxides to be used as, for example, materials for catalysts, membranes, filters, capacitor anodes. Lamellar nanostructures comprise gate metal or gate metal sub oxides and exist in powders or surface areas of metallic or ceramic substrates in the form of strips or layers with crosswise size of 5-100 nm. Proposed method comprises oxidation of gate metal oxides and, after reduction, immediate cooling to temperature whereat lamellar structures are still stable.EFFECT: fine structures with high specific surface.16 cl, 4 dwg
申请公布号 RU2493939(C2) 申请公布日期 2013.09.27
申请号 RU20100109437 申请日期 2008.07.23
申请人 KH. K. SHTARK GMBKH 发明人 GILLE GERKHARD;SHNITTER KRISTOF;BRUMM KHOL'GER;KHAAS KHEL'MUT;MJULLER ROBERT;BOBET MANFRED
分类号 B22F9/22;B82B3/00;C22C29/12 主分类号 B22F9/22
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