摘要 |
FIELD: process engineering.SUBSTANCE: invention relates to fine structures including gate metal or gate metal sub oxides to be used as, for example, materials for catalysts, membranes, filters, capacitor anodes. Lamellar nanostructures comprise gate metal or gate metal sub oxides and exist in powders or surface areas of metallic or ceramic substrates in the form of strips or layers with crosswise size of 5-100 nm. Proposed method comprises oxidation of gate metal oxides and, after reduction, immediate cooling to temperature whereat lamellar structures are still stable.EFFECT: fine structures with high specific surface.16 cl, 4 dwg |