发明名称 BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS, AND COMPUTER READABLE STORAGE MEDIUM
摘要 A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
申请公布号 KR101312461(B1) 申请公布日期 2013.09.27
申请号 KR20100069986 申请日期 2010.07.20
申请人 发明人
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
代理机构 代理人
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