FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A field effect transistor and a forming method thereof are provided to fill a gap area by arranging a gate electrode pattern on a semiconductor layer. CONSTITUTION: A fin part protrudes from a substrate. A device isolation film covers the lower sidewall of the fin part. A semiconductor layer (130) is formed on the upper sidewall and the upper surface of the fin part. A gap area is formed between the upper surface of the device isolation film and the lower surface of the semiconductor layer. A gate electrode pattern is formed on the semiconductor layer.