| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a MQW structure that allows reducing the lattice strain of a quantum well and improving luminous efficiency.SOLUTION: The semiconductor light-emitting element includes a light-emitting layer including a quantum well layer provided between a first semiconductor layer and a second semiconductor layer. The light-emitting layer has: a first barrier layer provided between the first semiconductor layer and the quantum well layer; a first intermediate layer provided between the first barrier layer and the quantum well layer and having a lattice spacing wider than that of the first barrier layer and narrower than that of the quantum well layer; a second barrier layer provided between the second semiconductor layer and the quantum well layer; and a second intermediate layer provided between the second barrier layer and the quantum well layer and having a lattice spacing wider than that of the second barrier layer and narrower than that of the quantum well layer. |
