发明名称 METHOD FOR MAKING SEMICONDUCTING SINGLE WALL CARBON NANOTUBES
摘要 A method for making semiconducting single walled carbon nanotubes (SWCNTs) includes providing a substrate. A single walled carbon nanotube film including metallic SWCNTs and semiconducting SWCNTs is located on the substrate. At least one electrode is located on the single walled carbon nanotube film and electrically connected with the single walled carbon nanotube film. A macromolecule material layer is located on the single walled carbon nanotube film to cover the single walled carbon nanotube film. The macromolecule material layer covering the metallic SWCNTs is removed by an electron beam bombardment method, to expose the metallic SWCNTs. The metallic SWCNTs and the macromolecule material layer covering the semiconducting SWCNTs are removed.
申请公布号 US2013252405(A1) 申请公布日期 2013.09.26
申请号 US201313798802 申请日期 2013.03.13
申请人 TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 LI JIE;JIANG KAI-LI;FAN SHOU-SHAN
分类号 H01L21/02 主分类号 H01L21/02
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