发明名称 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE MEMORY
摘要 According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold.
申请公布号 US2013249026(A1) 申请公布日期 2013.09.26
申请号 US201213621998 申请日期 2012.09.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KITAGAWA EIJI;DAIBOU TADAOMI;KATO YUSHI
分类号 H01L29/82 主分类号 H01L29/82
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