发明名称 SEMICONDUCTOR MEMORY APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME
摘要 A semiconductor memory apparatus includes: a memory cell area including a plurality of banks each having a plurality of octet banks corresponding to a first group and a plurality of octet banks corresponding to a second group; and a control unit configured to generate a plurality of control signals to input a data signal to any one octet bank of the first group and any one octet bank of the second group with a predetermined margin.
申请公布号 US2013250712(A1) 申请公布日期 2013.09.26
申请号 US201213619871 申请日期 2012.09.14
申请人 BYUN HEE JIN;SK HYNIX INC. 发明人 BYUN HEE JIN
分类号 G11C8/18 主分类号 G11C8/18
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