| 摘要 |
A semiconductor device includes an interlayer insulating film containing Si, O, C, and H, an under-bump metal film disposed over the interlayer insulating film and containing Ni, and a bump electrode disposed over the under-bump metal film. In the interlayer insulating film, a ratio of a peak height of Si-CH3 near a wave number 1270 cm-1 to a peak height of Si-O near a wave number 1030 cm-1 obtained by Fourier-transform infrared spectroscopy (FTIR) is 0.15 or greater and 0.27 or less. A ratio of a peak height of Si-CH2-Si near a wave number 1360 cm-1 to the peak height of Si-CH3 near the wave number 1270 cm-1 is 0.031 or greater.
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