发明名称 SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME
摘要 <p>An insulator layer (10) made from, e.g., silicone rubber is provided on an insulating substrate (3) along the peripheral edge of a circuit electrode (2a). A dielectric layer (11) made from a material having a higher permittivity than the insulator layer (10), e.g., aluminum nitride, is provided on the insulator layer (10). The insulator layer (10) has the same thickness as the end part of the circuit electrode (2a) and is joined, without there being a level difference, to the end part of the circuit electrode (2a). The dielectric layer (11) is provided over the circuit electrode (2a) and the insulator layer (10) so as to cover the joining face between the circuit electrode (2a) and the insulator layer (10).</p>
申请公布号 WO2013140663(A1) 申请公布日期 2013.09.26
申请号 WO2012JP79910 申请日期 2012.11.19
申请人 MITSUBISHI ELECTRIC CORPORATION;YAMATAKE ATSUSHI;SHIOTA HIROKI 发明人 YAMATAKE ATSUSHI;SHIOTA HIROKI
分类号 H01L23/12;H01L23/28;H01L25/07;H01L25/18 主分类号 H01L23/12
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