发明名称 PHOTOSENSITIVE RESIN COMPOSITION, CURED RELIEF PATTERN-MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a photosensitive resin composition which can be cured at low-temperature and gives a cured film excellent in chemical resistance; a cured relief pattern-manufacturing method to form a pattern using the photosensitive resin composition; and a semiconductor device and a display device having the cured relief pattern.SOLUTION: A photosensitive resin composition contains a phenol resin (A) having a repeating unit represented by the general formula (1) [in the formula, a is an integer of 1 to 3; b is an integer of 0 to 3; 1≤(a+b)≤4 is satisfied; Rrepresents a monovalent substituent selected from a monovalent organic group having a carbon number of 1 to 20, a halogen atom, a nitro group and a cyano group; and X represents divalent organic group selected from a divalent chain aliphatic group having a carbon number of 2 to 10, a divalent alicyclic group having a carbon number of 3 to 20, an alkylene oxide group having a carbon number of 1 to 10 and a divalent organic group having an aromatic ring], a photoacid-generating agent (B), solvent (C) and a nonionic surfactant (D).
申请公布号 JP2013190697(A) 申请公布日期 2013.09.26
申请号 JP20120057982 申请日期 2012.03.14
申请人 ASAHI KASEI E-MATERIALS CORP 发明人 OKUDA TOSHIAKI;SASAKI TAKAHIRO;YONETANI MASAKI
分类号 G03F7/023;C08G65/40;G03F7/004;G03F7/038;H01L21/027 主分类号 G03F7/023
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