| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer which reduces dust emission in a device manufacturing process, and to provide a manufacturing method of the silicon epitaxial wafer.SOLUTION: In a manufacturing method of a silicon epitaxial wafer, a silicon substrate is placed on a susceptor and an epitaxial layer is grown to form the silicon epitaxial wafer. The manufacturing method of the silicon epitaxial wafer includes the steps of: forming a silicone oxide film 4 on at least an entire rear surface of the silicon substrate W; removing the silicone oxide film 4 formed in at least an end part 3 of the silicon substrate W; and placing the silicon substrate W on the susceptor 16 through the silicone oxide film 4. An epitaxial layer 5 is grown on the silicon substrate while the silicon substrate W is held by the susceptor 16 through the silicon oxide film 4. |
