发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents excessive current from flowing when the resistance value of a resistance change element is changed.SOLUTION: The semiconductor device comprises: a resistance change element having a first resistance value or a second resistance value corresponding to current flowing therethrough; first and second transistors (Y3a and Q3k) connected in series between first and second electric wiring while sandwiching the resistance change element; and a power generating circuit supplying power to a control electrode of the first transistor. The power generating circuit supplies first power to the control electrode when changing the resistance of the resistance change element to the first resistance value, and supplies second power different from the first power to the control electrode when changing the resistance of the resistance change element to the second resistance value.
申请公布号 JP2013191249(A) 申请公布日期 2013.09.26
申请号 JP20120055195 申请日期 2012.03.13
申请人 ELPIDA MEMORY INC 发明人 MATANO TATSUYA
分类号 G11C13/00;H01L27/10;H01L27/105 主分类号 G11C13/00
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