OXIDE SEMICONDUCTOR AND SEMICONDUCTOR JUNCTION DEVICE INCLUDING OXIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor which has high carrier mobility, visible light transmissivity, and high surface flatness, and can be formed on a substrate with low heat resistance.SOLUTION: The oxide semiconductor film 11 formed on a substrate 12 comprises, as metal materials, a combination of In and Ga, or a combination of In, Ga and Zn in addition to 42-92 at% of Cu; the carrier type thereof is p type.