| 摘要 |
According to one embodiment, there is disclosed a method of manufacturing a semiconductor device forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate, bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer, removing physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer.
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