发明名称 |
METHODS OF FORMING REPLACEMENT GATE STRUCTURES WITH A RECESSED CHANNEL |
摘要 |
Disclosed herein are various methods of forming replacement gate structures with a recessed channel region. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define an initial gate opening having sidewalls and to expose a surface of the substrate and performing an etching process on the exposed surface of the substrate to define a recessed channel in the substrate. The method includes the additional steps of forming a sidewall spacer within the initial gate opening on the sidewalls of the initial gate opening to thereby define a final gate opening and forming a replacement gate structure in the final gate opening. |
申请公布号 |
US2013248985(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213429787 |
申请日期 |
2012.03.26 |
申请人 |
AMARNATH KULDEEP;HARGROVE MICHAEL;SAMAVEDAM SRIKANTH;GLOBALFOUNDRIES INC. |
发明人 |
AMARNATH KULDEEP;HARGROVE MICHAEL;SAMAVEDAM SRIKANTH |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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