| 摘要 |
A production method for a semiconductor device, that includes: an injection step in which proton injection occurs from the rear surface of a first conductivity-type semiconductor substrate (101); and a forming step in which, after the injection step, a first conductivity-type first semiconductor area (101a) having a higher impurity concentration than the semiconductor substrate (101) is formed, by annealing the semiconductor substrate (101) in a furnace. The forming step uses a furnace in a hydrogen atmosphere, and uses a hydrogen volume concentration for the furnace annealing of 0.5%-4.65%. As a result, said production method is capable of reducing crystallization defects during donor generation by proton injection, as well as increasing donor rates. |
