NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This nonvolatile storage device is provided with: a first interlayer insulating layer (101); a first wiring (102) disposed on the first interlayer insulating layer (101); a first plug (104) and having a recess (105) in a portion of the center part of the surface, the first plug (104) being disposed on the first wiring (102); a first electrode (106) having a recess (1061) in the surface above the recess (105), the first electrode (106) being disposed so as to cover the recess (105) on the first plug (104); a resistance change layer (109) disposed on the first electrode (106), the resistance change layer (109) having a first resistance change layer (107) composed of a first metal oxide, a second resistance change layer (108) composed of a second metal oxide having a lower oxygen deficiency than the first resistance change layer (107), and a recess (1081) above the recess (1061), and a second electrode (110) disposed on the resistance change layer (109).