| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an excellent inverse voltage breakdown characteristic, while a bidirectional switch body constituted from only one element, and a high gate voltage is applicable.SOLUTION: A semiconductor device includes a first control layer 19A which is formed between a semiconductor layer laminate 13 and a first gate electrode 18A, being configured of a nitride semiconductor of p-type conductivity, and a second control layer 19B which is formed between the semiconductor layer laminate 13 and a second gate electrode 18B, being configured from a nitride semiconductor of p-type conductivity. A top layer 15 of the semiconductor layer laminate 13 includes a first portion 15a and a second portion 15b whose film thickness is less than the first portion 15a. The first control layer 19A and the second control layer 19B are formed on the first portion 15a, and between the first control layer 19A and the second control layer 19B, the top layer of a semiconductor laminate 15 is the second portion 15b. |
