| 摘要 |
Methods of forming a passivation film stack on a surface of a silicon-based substrate are provided. In one embodiment, the passivation film stack includes a silicon nitride layer and an aluminum oxide layer disposed between the silicon nitride layer and the silicon-based substrate. The aluminum oxide layer is deposited such that the aluminum oxide layer has a low hydrogen (H) content less than about 17 atomic % and a mass density greater than about 2.5 g/cm3. The silicon nitride layer is deposited on the aluminum oxide layer such that the silicon nitride layer has a low hydrogen (H) content less than about 5 atomic %, and a mass density greater than about 2.7 g/cm3. Reduced amount of hydrogen content in the aluminum oxide layer and the silicon nitride layer prevents gas bubbles from forming in the layers and at the interface of the passivation film stack that cause the film stack to blister.
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