发明名称 ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
摘要 A method of etching silicon of a material comprising silicon, the method comprising the steps of partially covering a silicon surface of the material comprising silicon with an elemental metal and then carrying out a metal-assisted chemical etching of the silicon by exposing the partially covered silicon surface to an etching composition, wherein at least some of the elemental metal for the metal-assisted chemical etching is formed by either: (a) exposing the silicon surface to a composition comprising metal ions, wherein the elemental metal forms by reduction of the metal ions and wherein the composition comprising metal ions is substantially free of HF, or (b) depositing the elemental metal directly onto the silicon surface.
申请公布号 WO2013140177(A2) 申请公布日期 2013.09.26
申请号 WO2013GB50742 申请日期 2013.03.21
申请人 NEXEON LIMITED 发明人 LIU, FENGMING;JIANG, YUXIONG;FRIEND, CHRISTOPHER MICHAEL;SPEED, JONATHON
分类号 C23C18/00 主分类号 C23C18/00
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