| 摘要 |
According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less. |
