发明名称 |
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer. |
申请公布号 |
US2013248950(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213692012 |
申请日期 |
2012.12.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG HONG-SEONG;KIM YOON-HAE;YOON JONG-SHIK |
分类号 |
H01L29/78;H01L29/40 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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