| 摘要 |
A nonvolatile semiconductor storage device includes a semiconductor substrate on which an element isolation groove is formed, memory cells each including a gate electrode having a charge storage layer, an interelectrode insulating film, and a control electrode, that is formed on the semiconductor substrate via a tunnel insulating film, and an insulating film disposed in the element isolation groove. The interelectrode insulating film is formed to have a first portion above the insulating film that is separated from one of the insulating film and the control electrode by an air gap and a second portion above the charge storage layer that is separated from the charge storage layer by a cavity. |
