发明名称 |
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
A thin film transistor (100) of the present invention is provided with a gate insulating layer (34), which is formed of an oxide containing lanthanum and zirconium (provided that this oxide may include impurities, and hereinafter the same shall apply with respect to oxides), between a gate electrode (20) and a channel (44). The channel (44) is formed of an oxide for channels, said oxide being composed of: a first oxide that contains indium and zinc, while containing zirconium (Zr) at an atomic ratio of from 0.015 to 0.075 (inclusive) when the indium contained therein is taken as 1; a second oxide that contains indium, while containing zirconium (Zr) at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium (In) contained therein is taken as 1; or a third oxide that contains indium, while containing lanthanum at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium contained therein is taken as 1. |
申请公布号 |
WO2013141197(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
WO2013JP57621 |
申请日期 |
2013.03.18 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
SHIMODA, TATSUYA;INOUE, SATOSHI;PHAN, TRONG TUE;MIYASAKO, TAKAAKI;LI, JINWANG |
分类号 |
H01L29/786;H01L21/28;H01L21/336;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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